Silicon drift detector; studies about geometry of electrodes and production technology

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 377; no. 2; pp. 393 - 396
• Main Authors: Beolè, S., Bonvicini, V., Burger, P., Casse, G., Corsi, F., De Venuto, D., Giubellino, P., Gramegna, G., Kolojvari, A., Manzari, V., Marzocca, C., Rashevsky, A., Riccati, L., Vinogradov, L., Vacchi, A., Zampa, N.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.1996
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/0168-9002(96)00201-X

Having high spatial resolution and good energy response the silicon drift detector (SDD) finds specific applications in experimental physics. The aims of this project are: simplified detector production and operation, improved total-to-sensitivearea ratio and stable working conditions. We have started a systematic study which includes all elements of the device, the silicon wafer, the various electrodes, an improved technology and VLSI front-end electronics. Several prototypes have been produced and we are progressively testing them. We summarize here our program of work and present the results from the first drift structures tested.