optical studies of disorder and defects in amorphous GexSe1−X films as a function of composition
The optical absorption edges of as-deposited evaporated a-GeXSe1−X films, with x = 0, 20, 33, 43 and 50 at%, have been accurately determined down to 0.6 eV from a combination of optical and PDS experiments. The results are analyzed as a function of composition in terms of chemical ordering, strain-i...
Saved in:
Published in | Journal of non-crystalline solids Vol. 164-166; pp. 1259 - 1262 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
02.12.1993
|
Online Access | Get full text |
Cover
Loading…
Summary: | The optical absorption edges of as-deposited evaporated a-GeXSe1−X films, with x = 0, 20, 33, 43 and 50 at%, have been accurately determined down to 0.6 eV from a combination of optical and PDS experiments. The results are analyzed as a function of composition in terms of chemical ordering, strain-induced disorder and coordination defects, taking the pure constituents and the stoichiometric GeSe2 compound as references. |
---|---|
ISSN: | 0022-3093 1873-4812 |
DOI: | 10.1016/0022-3093(93)91230-Z |