optical studies of disorder and defects in amorphous GexSe1−X films as a function of composition

The optical absorption edges of as-deposited evaporated a-GeXSe1−X films, with x = 0, 20, 33, 43 and 50 at%, have been accurately determined down to 0.6 eV from a combination of optical and PDS experiments. The results are analyzed as a function of composition in terms of chemical ordering, strain-i...

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Published inJournal of non-crystalline solids Vol. 164-166; pp. 1259 - 1262
Main Authors Kotkata, M.F., Kandil, K.M., Thèye, M.L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 02.12.1993
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Summary:The optical absorption edges of as-deposited evaporated a-GeXSe1−X films, with x = 0, 20, 33, 43 and 50 at%, have been accurately determined down to 0.6 eV from a combination of optical and PDS experiments. The results are analyzed as a function of composition in terms of chemical ordering, strain-induced disorder and coordination defects, taking the pure constituents and the stoichiometric GeSe2 compound as references.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(93)91230-Z