Schottky rectifiers on silicon using high barriers

• Published in: Solid-state electronics Vol. 26; no. 4; pp. 295 - 297
• Main Authors: Stolt, L., Bohlin, K., Tove, P.A., Norde, H.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.1983
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(83)90126-0

Schottky diodes are presently used for power rectification because of their low forward voltage drop. However, they have only been fabricated on relatively low resistivity and thin semiconductor layers. Hence the reverse breakdown voltages are low. To make diodes that stand higher reverse voltages, low doped material of sufficient thickness is necessary. Ordinary Schottky barriers do not inject minority carriers and the resistive voltage drop at high forward currents will be large, However, for high Schottky barriers ∼ 0.9eV, minority carriers are injected and the series resistance is decreased. In this paper we report results from one-dimensional numerical calculations as well as experimental results of high barrier Schottky diodes. We discuss the voltage drop at high forward currents for different substrate resistivity and thickness, as well as values of the high barrier.