Modelling of VHF and microwave power transistors operating in quasi-saturation
The modelling of VHF and microwave power transistors operating under quasi-saturation conditions is treated. Physical effects in the collector region are considered to be dominant in these devices under such circumstances, and a representation of the collector involving a variable-width charge-stora...
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Published in | Solid-state electronics Vol. 25; no. 8; pp. 723 - 731 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.1982
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Online Access | Get full text |
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Abstract | The modelling of VHF and microwave power transistors operating under quasi-saturation conditions is treated. Physical effects in the collector region are considered to be dominant in these devices under such circumstances, and a representation of the collector involving a variable-width charge-storage region, modelled in two-lump form, is developed in order to characterize device behaviour. A systematic procedure is presented for the evaluation of the parameters of the collector region model. The model has demonstrated its ability to describe device characteristics and performance under d.c., step transient and large signal sinusoidal drive conditions; typical results are presented. |
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AbstractList | The modelling of VHF and microwave power transistors operating under quasi-saturation conditions is treated. Physical effects in the collector region are considered to be dominant in these devices under such circumstances, and a representation of the collector involving a variable-width charge-storage region, modelled in two-lump form, is developed in order to characterize device behaviour. A systematic procedure is presented for the evaluation of the parameters of the collector region model. The model has demonstrated its ability to describe device characteristics and performance under d.c., step transient and large signal sinusoidal drive conditions; typical results are presented. |
Author | Boothroyd, A.R. Alden, A.W. |
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Cites_doi | 10.1016/0038-1101(73)90158-5 10.1109/T-ED.1975.18075 10.1016/0038-1101(68)90085-3 10.1109/T-ED.1969.16564 |
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Copyright | 1982 |
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References | Kirk (BIB1) 1962; ED-9 Whittier, Tremere (BIB2) 1969; ED-16 Kumar, Hunter (BIB7) 1975; ED-22 Treen (BIB10) 1971 de Graaff (BIB6) 1973; 16 Sayeed (BIB11) 1972 Beale, Emms, Hillbourne (BIB12) 1971 de Graaff (BIB5) 1971; 26 Perner (BIB9) 1974 Pals, de Graff (BIB4) 1969; 24 Wang, Branin (BIB8) 1973 Beale, Slatter (BIB3) 1968; 11 Anderson, McIntyre (BIB13) 1965 Pals (10.1016/0038-1101(82)90201-5_BIB4) 1969; 24 Whittier (10.1016/0038-1101(82)90201-5_BIB2) 1969; ED-16 Beale (10.1016/0038-1101(82)90201-5_BIB12) 1971 Kumar (10.1016/0038-1101(82)90201-5_BIB7) 1975; ED-22 Beale (10.1016/0038-1101(82)90201-5_BIB3) 1968; 11 Wang (10.1016/0038-1101(82)90201-5_BIB8) 1973 Sayeed (10.1016/0038-1101(82)90201-5_BIB11) 1972 Perner (10.1016/0038-1101(82)90201-5_BIB9) 1974 de Graaff (10.1016/0038-1101(82)90201-5_BIB6) 1973; 16 de Graaff (10.1016/0038-1101(82)90201-5_BIB5) 1971; 26 Anderson (10.1016/0038-1101(82)90201-5_BIB13) 1965 Treen (10.1016/0038-1101(82)90201-5_BIB10) 1971 Kirk (10.1016/0038-1101(82)90201-5_BIB1) 1962; ED-9 |
References_xml | – year: 1965 ident: BIB13 article-title: High frequency high power transistor studies publication-title: contributor: fullname: McIntyre – volume: 26 start-page: 191 year: 1971 ident: BIB5 publication-title: Philips Res. Rep. contributor: fullname: de Graaff – start-page: 47 year: 1971 end-page: 57 ident: BIB12 publication-title: Micro-Electronics contributor: fullname: Hillbourne – start-page: 86 year: 1973 end-page: 89 ident: BIB8 article-title: Multi-section model of an publication-title: IEEE Power Electron. Spec. Conf. Record contributor: fullname: Branin – year: 1972 ident: BIB11 article-title: Behaviour of bipolar epitaxial transistors at high current levels publication-title: M.Eng. Thesis contributor: fullname: Sayeed – volume: ED-22 start-page: 51 year: 1975 ident: BIB7 publication-title: IEEE Trans. Electron Dev. contributor: fullname: Hunter – year: 1971 ident: BIB10 article-title: One-dimensional DC numerical analysis of double diffused epitaxial transistors for arbitrary injection levels publication-title: M.Eng. Thesis contributor: fullname: Treen – volume: ED-16 start-page: 39 year: 1969 ident: BIB2 publication-title: IEEE Trans. Electron Dev. contributor: fullname: Tremere – start-page: 418 year: 1974 end-page: 420 ident: BIB9 article-title: Quasi-saturation region model of an NPN publication-title: Tech. Digest of IEEE Int. Electron Dev. Meeting contributor: fullname: Perner – volume: 24 start-page: 53 year: 1969 ident: BIB4 publication-title: Philips Res. Rep. contributor: fullname: de Graff – volume: ED-9 start-page: 164 year: 1962 ident: BIB1 publication-title: Electron Dev. contributor: fullname: Kirk – volume: 11 start-page: 241 year: 1968 ident: BIB3 publication-title: Solid-State Electron. contributor: fullname: Slatter – volume: 16 start-page: 587 year: 1973 ident: BIB6 publication-title: Solid-State Electron. contributor: fullname: de Graaff – year: 1965 ident: 10.1016/0038-1101(82)90201-5_BIB13 article-title: High frequency high power transistor studies publication-title: RCA Victor Res. Rep. No. 6.520.2 contributor: fullname: Anderson – volume: 16 start-page: 587 year: 1973 ident: 10.1016/0038-1101(82)90201-5_BIB6 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(73)90158-5 contributor: fullname: de Graaff – volume: 24 start-page: 53 year: 1969 ident: 10.1016/0038-1101(82)90201-5_BIB4 publication-title: Philips Res. Rep. contributor: fullname: Pals – volume: 26 start-page: 191 year: 1971 ident: 10.1016/0038-1101(82)90201-5_BIB5 publication-title: Philips Res. Rep. contributor: fullname: de Graaff – volume: ED-9 start-page: 164 year: 1962 ident: 10.1016/0038-1101(82)90201-5_BIB1 publication-title: Electron Dev. contributor: fullname: Kirk – year: 1971 ident: 10.1016/0038-1101(82)90201-5_BIB10 article-title: One-dimensional DC numerical analysis of double diffused epitaxial transistors for arbitrary injection levels contributor: fullname: Treen – volume: ED-22 start-page: 51 year: 1975 ident: 10.1016/0038-1101(82)90201-5_BIB7 publication-title: IEEE Trans. Electron Dev. doi: 10.1109/T-ED.1975.18075 contributor: fullname: Kumar – year: 1972 ident: 10.1016/0038-1101(82)90201-5_BIB11 article-title: Behaviour of bipolar epitaxial transistors at high current levels contributor: fullname: Sayeed – start-page: 86 year: 1973 ident: 10.1016/0038-1101(82)90201-5_BIB8 article-title: Multi-section model of an N+-P-ν-N+ high voltage power switching transistors contributor: fullname: Wang – start-page: 418 year: 1974 ident: 10.1016/0038-1101(82)90201-5_BIB9 article-title: Quasi-saturation region model of an NPN−N transistor contributor: fullname: Perner – volume: 11 start-page: 241 year: 1968 ident: 10.1016/0038-1101(82)90201-5_BIB3 publication-title: Solid-State Electron. doi: 10.1016/0038-1101(68)90085-3 contributor: fullname: Beale – volume: ED-16 start-page: 39 year: 1969 ident: 10.1016/0038-1101(82)90201-5_BIB2 publication-title: IEEE Trans. Electron Dev. doi: 10.1109/T-ED.1969.16564 contributor: fullname: Whittier – start-page: 47 year: 1971 ident: 10.1016/0038-1101(82)90201-5_BIB12 contributor: fullname: Beale |
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