Modelling of VHF and microwave power transistors operating in quasi-saturation

The modelling of VHF and microwave power transistors operating under quasi-saturation conditions is treated. Physical effects in the collector region are considered to be dominant in these devices under such circumstances, and a representation of the collector involving a variable-width charge-stora...

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Bibliographic Details
Published inSolid-state electronics Vol. 25; no. 8; pp. 723 - 731
Main Authors Alden, A.W., Boothroyd, A.R.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.1982
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Summary:The modelling of VHF and microwave power transistors operating under quasi-saturation conditions is treated. Physical effects in the collector region are considered to be dominant in these devices under such circumstances, and a representation of the collector involving a variable-width charge-storage region, modelled in two-lump form, is developed in order to characterize device behaviour. A systematic procedure is presented for the evaluation of the parameters of the collector region model. The model has demonstrated its ability to describe device characteristics and performance under d.c., step transient and large signal sinusoidal drive conditions; typical results are presented.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(82)90201-5