Topographic exposures of real silicon structures on the VEPP-4 SR beam

Studies have been made of the strain fields and the inclusions in various silicon structures by methods of X-ray topography, including section exposure, on the white SR beam of the VEPP-4 storage ring.

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 261; no. 1; pp. 253 - 256
Main Authors Kulipanov, G.N., Litvinov, Yu.M., Mazurenko, S.N., Mikhailov, M.A., Panchenko, V.E., Vasenkov, A.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.1987
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Summary:Studies have been made of the strain fields and the inclusions in various silicon structures by methods of X-ray topography, including section exposure, on the white SR beam of the VEPP-4 storage ring.
ISSN:0168-9002
1872-9576
DOI:10.1016/0168-9002(87)90611-5