Experimental study of disorder and defects in undoped a-Si:H as a function of annealing and hydrogen evolution

Information on the incorporation of hydrogen and its effects on the disorder and the defects in undoped PECVD a-Si:H films deposited under different conditions is gained from systematicannealing studies up to 500–600°C. The results reveal a better bonded hydrogen stability in he samples deposited at...

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Published inJournal of non-crystalline solids Vol. 164; pp. 285 - 288
Main Authors Zellama, K., von Bardeleben, J.H., Quillet, V., Bouizem, Y., Sládek, P., Thèye, M.L., Roca i Cabarrocas, P.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.1993
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Summary:Information on the incorporation of hydrogen and its effects on the disorder and the defects in undoped PECVD a-Si:H films deposited under different conditions is gained from systematicannealing studies up to 500–600°C. The results reveal a better bonded hydrogen stability in he samples deposited at high rate, related to their particular microstructure.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(93)90546-A