The structural and electrical properties of ion-beam mixed tungsten silicides

The factors affecting the structural and electrical properties of ion beam induced WSi 2 films have been studied by combined techniques. It is found that the formation temperature of the refractory tungsten silicide can be significantly reduced by elevated substrate temperatures during implantation....

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Bibliographic Details
Published inVacuum Vol. 39; no. 2; pp. 243 - 245
Main Authors Xunliang, Ding, Zhonglie, Wang, Yahong, Qian
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1989
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Summary:The factors affecting the structural and electrical properties of ion beam induced WSi 2 films have been studied by combined techniques. It is found that the formation temperature of the refractory tungsten silicide can be significantly reduced by elevated substrate temperatures during implantation. The change in the resistivity of the film after annealing is related to the microstructure. Oxygen impurities present in the film limit the grain growth resulting in smaller grains and higher resistivity. The redistribution of oxygen and implanted As ions during annealing was observed. A significant portion of the implanted As is lost from the surface after annealing at higher temperatures. Finally, the mechanism of the silicide formation by ion beam mixing is briefly discussed.
ISSN:0042-207X
1879-2715
DOI:10.1016/0042-207X(89)90208-X