The growth of epitaxial ZnSe upon germanium substrates
This paper reports the growth conditions controlling the deposition by vacuum evaporation of epitaxial layers of n-type zinc selenide upon oriented p-type germanium substrates. The study has been performed in both conventional and ultra-high vacuum systems, with the growth proceeding from the vapour...
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| Published in | Thin solid films Vol. 9; no. 3; pp. 409 - 429 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.01.1972
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| Online Access | Get full text |
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| Summary: | This paper reports the growth conditions controlling the deposition by vacuum evaporation of epitaxial layers of
n-type zinc selenide upon oriented
p-type germanium substrates. The study has been performed in both conventional and ultra-high vacuum systems, with the growth proceeding from the vapour phase. The degree of ordering, growth rate and surface morphology of the zinc selenide layers has been systematically investigated as a function of the orientation and temperature of the germanium substrate and of the degree of residual vacuum in which the growth occurs. The influence that the source has in controlling epitaxy has also been observed. The growth techniques utilized in these studies are reported in detail and the underlying mechanisms controlling the growth process of ordered epitaxial layers are discussed. |
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| ISSN: | 0040-6090 1879-2731 |
| DOI: | 10.1016/0040-6090(72)90130-7 |