Physical limits of “superresolution lithography”

From viewpoint of partially coherent imaging theory we discuss resolution and depth of focus for L/S-structures and isolated structures. It could be shown that it is not possible to increase the transferable frequency for L/S-structures. The effect of resolution improvement for L/S-structures is cau...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 23; no. 1; pp. 179 - 182
Main Authors Hild, R., Nitzsche, G., Altenburger, U.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1994
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Summary:From viewpoint of partially coherent imaging theory we discuss resolution and depth of focus for L/S-structures and isolated structures. It could be shown that it is not possible to increase the transferable frequency for L/S-structures. The effect of resolution improvement for L/S-structures is caused by a contrast enhancement only. For isolated structures the pupil transmission is mainly responsible for the intensity distribution on the wafer.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(94)90132-5