Double Ridley-Watkins-Hilsum-Gunn effect in compensated GaAs

Our studies show that impurity scattering drastically reduces low-field electron mobility, peak velocity and negative differential mobility in compensated GaAs. Under certain conditions, such as at low temperature, high doping density and high compensation ratio, the electron velocity versus electri...

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Bibliographic Details
Published inSolid-state electronics Vol. 31; no. 3; pp. 607 - 610
Main Authors Xu, Jingming, Shur, Michael
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.1988
Subjects
compensated GaAs
Double Ridley-Watkins-Hilsum-Gunn effect
Gunn domain
impurity scattering
transport in semiconductor
transport in semiconductor
Double Ridley-Watkins-Hilsum-Gunn effect
impurity scattering
compensated GaAs
Gunn domain
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Summary:Our studies show that impurity scattering drastically reduces low-field electron mobility, peak velocity and negative differential mobility in compensated GaAs. Under certain conditions, such as at low temperature, high doping density and high compensation ratio, the electron velocity versus electric field relation may exhibit two maxima. The reason for the second maximum is the decrease in impurity scattering rate with an increase in the kinetic energy of L-valley electrons, and subsequent electron transfer into the X-valleys. We call this phenomenon the Double Ridley-Watkins-Hilsum-Gunn effect. This should have a profound influence upon the characteristics of high field domains in compensated GaAs.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90352-8