Enhancement of Photodetector Responsivity in Standard SOI CMOS Processes by introducing Resonant Grating Structures

A new photodetector concept is described, which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H. Brenner, “Aspects for calculati...

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Bibliographic Details
Published inJournal of the European Optical Society. Rapid publications Vol. 6; p. 11014
Main Authors Auer, M., Brenner, K.-H.
Format Journal Article
LanguageEnglish
Published EDP Sciences 2011
Subjects
local absorption
photodetector design
rcwa
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Summary:A new photodetector concept is described, which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H. Brenner, “Aspects for calculating local absorption with the rigorous coupled-wave method” Optics Express 2010, Vol. 18, Iss. 10, pp. 10369-10376, (2010)). The simulations show that optimized lateral grating structures are able to enhance the absorption efficiency of thin semi-conductor detectors by a factor of 32 compared to non-enhanced approaches.
ISSN:1990-2573
1990-2573
DOI:10.2971/jeos.2011.11014s