Study of basic mechanisms of single event upset in low-capacitance Si and GaAs diodes using high-energy microbeams

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 104; no. 1; pp. 528 - 532
• Main Authors: Nishijima, T., Sekiguchi, H., Matsuda, S., Takeuchi, M., Shiono, N., Anayama, H., Mirio, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.1995
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/0168-583X(95)00465-3

Current transients induced in Si and GaAs diodes by 2 MeV helium ions were studied by a high-speed digitizing technique (time resolution = 55 ps) using a NbPb superconducting delay-line. We designed and prepared three different types of silicon P N junction diodes and GaAs Schottky diodes for the present work. An optimum beam position on the diodes was set using a high-resolution ion beam induced charge (IBIC) imaging system. The space resolving power of the measurement system was confirmed with a small SSD (50 μm ⊘) made on an epi substrate with 20 μm thickness. Current transients were observed for all diodes tested in this work. In the case of P N junction diode on a thin (1.5 μm) epi substrate, the collected charge was constant for the bias voltage in a range from − 3 to − 15 V. A funneling factor for a bulk GaAs diode was 1.5.