Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 106; no. 1; pp. 471 - 476
• Main Authors: Hofsäß, V, Kuhn, J., Kaden, C., Härle, V., Bolay, H., Scholz, F., Schweizer, H., Hillmer, H., Lösch, R., Schlapp, W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.1995
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/0168-583X(95)00755-5

We report on the realization of gain coupled distributed feedback (GC-DFB) lasers using masked implantation enhanced intermixing (MIEI) in a full planar technology. The process requires only planar epitaxy steps to minimize ion straggling. We present a detailed investigation on the integration processing steps as implantation, subsequent annealing and regrowth with InP (MOCVD). We also discuss critical technology steps. Surface morphology depends very sensitive on implantation and annealing. Nonradiative recombination caused by defects leads to high losses in optical devices. We achieve good results for an AsH 3 stabilized annealing step in a MOCVD equipment, compared to rapid thermal annealing (RTA), which proceeds as the second epitaxial step. Photoluminescence (PL) studies show the excellent interface quality. High homogeneity and small linewidth after the integration process indicate sufficient quality to realize electrical gain coupled DFB-laser devices by IEI.