High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1-xGex

• Published in: Journal of electronic materials Vol. 32; no. 11; pp. 1171 - 1181
• Main Authors: CHEN, X, SHI, Z, BANERJEE, S. K, ZHOU, J. P, RABENBERG, L. K
• Format: Conference Proceeding Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.11.2003
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Interfacial layer; phase formation; Inorganic compounds; Semiconductor materials; Electrical properties; Transition element compounds; Nickel silicides; High-resolution TEM; Si1-xGex; Experimental study; Lateral growth; silicide; Thin films; Germanium alloys; Silicon alloys; Siliconizing; Solid state reaction; Nickel; Silicon; Interface reaction; Thermal annealing; Film resistor; NiSi1-xGex
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-003-0008-3

Nickel-silicide phase formation in the Ni/Si and Ni/Si1-xGex (x = 0.20) systems and its correlation with variations in sheet resistance have been studied using high-resolution transmission electron microscopy (HRTEM) and related techniques. Following a 500 deg C anneal, uniform and low-resistivity NiSi and NiSi1-xGex (x < 0.20) crystalline films were formed in the respective systems. Annealed at 900 deg C, NiSi2, in the form of pyramidal or trapezoidal islands, is found to replace the NiSi in the Ni/Si system. After a 700 deg C anneal, threading dislocations were observed for the first time in the Ni/Si1-xGex system to serve as heterogeneous nucleation sites for rapid lateral NiSi1-xGex growth.