A mevva ion source for simultaneous implantation of gas and metal ions

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 106; no. 1; pp. 651 - 656
• Main Authors: Wolf, B.H., Emig, H., Rück, D.M., Spädtke, P., Oks, E.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.1995
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/0168-583X(95)00782-2

A vacuum arc ion source has been developed which can deliver gas ions as well as the metal ions from the cathode material. Depending on the gas and the cathode material used, the amount of gas ions from the total ion beam can be influenced by the strength of an axial magnetic field in the arc region. The maximum ion current for gases varied from 5% for He + to 95% for Xe +. With titanium we found 30% Ti 2+, N + and N 2 + each. Simultaneous implantation with Ti and N with a similar range allows the formation of TiN buried layers, if the conditions are properly selected. By increasing the magnetic field up to 0.4 T one can also shift the average charge state by 0.5 to 1 charge depending on the element used as cathode. This effect allows higher implanatation energies without increasing the acceleration voltage.