Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

• Published in: Surface science Vol. 251-252; pp. 424 - 427
• Main Authors: Hricovini, K., Le Lay, G., Kahn, A., Taleb-Ibrahimi, A., Bonnet, J.E., Lassabatère, L., Dumas, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.1991
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(91)91027-U

We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hν = 108 eV), we recorded spectra in a surface-sensitive mode (hν = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.