Measurement of the density dependence of the band gap renormalization in a n-type modulation doped quantum well

The electron density in a one side n-type modulation-doped quantum well is monitored by light illumination or in-plane voltage application. The comparison between the results of optical experiments and a calculation of the energy levels of the structure gives a measurement of the density dependence...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 3; no. 1; pp. 25 - 28
Main Authors Orgonasi, J., Meynadier, M.H., Delalande, C., Weimann, G., Schlapp, W.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1987
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Summary:The electron density in a one side n-type modulation-doped quantum well is monitored by light illumination or in-plane voltage application. The comparison between the results of optical experiments and a calculation of the energy levels of the structure gives a measurement of the density dependence of the bandgap renormalization.
ISSN:0749-6036
1096-3677
DOI:10.1016/0749-6036(87)90172-8