Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour deposition

Growth of low-resistivity and high-quality ZnSe and ZnS films by low-pressure MOCVD has been examined. It has been shown that ZnSe films having electron mobilities as high as 3650 and 1130 cm 2/V·s at 77 K for 3 and 1 μm thick films, respectively, can be obtained. The shallow donor concentration in...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 72; no. 1; pp. 13 - 16
Main Authors Yoshikawa, A., Yamaga, S., Tanaka, K., Kasai, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1985
Online AccessGet full text

Cover

More Information
Summary:Growth of low-resistivity and high-quality ZnSe and ZnS films by low-pressure MOCVD has been examined. It has been shown that ZnSe films having electron mobilities as high as 3650 and 1130 cm 2/V·s at 77 K for 3 and 1 μm thick films, respectively, can be obtained. The shallow donor concentration in these films is about 10 15-10 16 cm -3 and the electron-trap deep-center concentration is less than the shallow donor concentration by a factor of 100. Furthermore, it has been shown for the first time that low-resistivity ZnS films can be grown on GaAs by MOCVD.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(85)90110-1