A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems]

Experimental observations of an improved single-event gate rupture (SEGR) hardened stripe-cell MOSFET demonstrated that ion beam energy, penetration depth, and strike angle (tilt angle) have a significant influence upon the measured SEGR failure threshold voltage.

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 48; no. 6; pp. 1879 - 1884
Main Authors Titus, J.L., Wheatley, C.F., Gillberg, J.E., Burton, D.I.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Cranes
Electrons
Energy measurement
Ion beams
Manufacturing
MOSFET circuits
Neck
Power MOSFET
Protons
Threshold voltage
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Summary:Experimental observations of an improved single-event gate rupture (SEGR) hardened stripe-cell MOSFET demonstrated that ion beam energy, penetration depth, and strike angle (tilt angle) have a significant influence upon the measured SEGR failure threshold voltage.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983146