Probing the structure of semiconductor superlattices and heterostructures by EXAFS

We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lat...

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Bibliographic Details
Published inSurface science Vol. 174; no. 1; pp. 567 - 572
Main Authors Kao, Y.H., Woronick, S.C., Canova, E., Su, G.W., Chang, L.L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.1986
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Summary:We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(86)90473-5