Switching kinetics in epitaxial PZT thin films

We present the investigations of the domain kinetics during fast switching in PZT/YBCO epitaxial heterostructures. The original method of mathematical treatment enables to reconstruct the main stages of domain evolution from transient current data and to determine the field dependence of main kineti...

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Published inMicroelectronic engineering Vol. 29; no. 1; pp. 153 - 157
Main Authors Shur, V.Ya, Makarov, S.D., Ponomarev, N.Yu, Volegov, V.V., Tonkachyova, N.A., Suslov, L.A., Salashchenko, N.N., Kluenkov, E.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.1995
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Summary:We present the investigations of the domain kinetics during fast switching in PZT/YBCO epitaxial heterostructures. The original method of mathematical treatment enables to reconstruct the main stages of domain evolution from transient current data and to determine the field dependence of main kinetic parameters.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(95)00135-2