An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules

Despite their growing adoption in a variety of applications, SiC MOSFETs are generally not available at high current rating. Therefore, there is a high demand for power modules exploiting configurations based on parallel devices. However, these products still need optimization in order to ensure lon...

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Published inMaterials science forum Vol. 963; p. 1
Main Authors Breglio, Giovanni, Borghese, Alessandro, Maresca, Luca, d'Alessandro, Vincenzo, Codecasa, Lorenzo, Catalano, Antonio Pio, Fayyaz, Asad, Riccio, Michele, Castellazzi, Alberto, Irace, Andrea
Format Book Chapter Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications 19.07.2019
Trans Tech Publications Ltd
Subjects
General Engineering & Project Administration
Materials
Modules
MOSFETs
Optimization
Parameters
Variation
Electrothermal Simulation
Power Module
SiC MOSFET
Reliability
Multi-Chip
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Summary:Despite their growing adoption in a variety of applications, SiC MOSFETs are generally not available at high current rating. Therefore, there is a high demand for power modules exploiting configurations based on parallel devices. However, these products still need optimization in order to ensure long-term reliability. This paper presents a methodology relying on fast electrothermal simulations aimed at aiding this optimization procedure. The proposed approach is applied to a power module in which the parallel MOSFETs are realistically subject to mismatched parameters.
Bibliography:Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISBN:9783035713329
3035713324
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.855