High-speed nanoscale metal-semiconductor-metal photodetectors with terahertz bandwidth

A model for the maximum bandwidth achievable in metal-semiconductor-metal photodetectors is developed and simulated to determine the dimensions required for terahertz bandwidth. The bandwidth is found to exceed 1 THz for devices with line pitch less than 200 nm.

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Bibliographic Details
Published inOptical and quantum electronics Vol. 42; no. 11-13; pp. 771 - 776
Main Authors Marks, Zefram, Zeghbroeck, Bart Van
Format Journal Article Conference Proceeding
LanguageEnglish
Published Boston Springer US 01.10.2011
Springer
Subjects
Applied sciences
Bandwidth
Characterization and Evaluation of Materials
Circuit properties
Compound structure devices
Computer Communication Networks
Computer simulation
Electric, optical and optoelectronic circuits
Electrical Engineering
Electronics
Exact sciences and technology
High speed
Integrated optoelectronics. Optoelectronic circuits
Lasers
Nanocomposites
Nanomaterials
Nanostructure
Optical and optoelectronic circuits
Optical Devices
Optics
Optoelectronic devices
Photodetectors
Photonics
Physics
Physics and Astronomy
Quantum electronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Optoelectronics
Terahertz
Photodetector
Metal-semiconductor-metal
Nanometer scale
THz range
Submillimeter wave devices
High speed
Optoelectronic device
MSM structure
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Summary:A model for the maximum bandwidth achievable in metal-semiconductor-metal photodetectors is developed and simulated to determine the dimensions required for terahertz bandwidth. The bandwidth is found to exceed 1 THz for devices with line pitch less than 200 nm.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-011-9477-4