Research on synthetic-grating SOI structure for simultaneous operation of 1310 and 1550 nanometer signal: A handy proposal of optical interconnect for photonic integrated circuits

A single apt photonic device is adduced in this research for operating two signals concurrently In this case the proposed device deals with synthetic grating silicon on insulator (SOI) structure, where signals are realized with the wavelengths of 1310nm and 1550nm. To accomplish the same, reflectanc...

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Bibliographic Details
Published inOptik (Stuttgart) Vol. 150; pp. 83 - 87
Main Authors Singh, Bhopendra, Palai, G.
Format Journal Article
LanguageEnglish
Published Elsevier GmbH 01.12.2017
Subjects
Reflectance and transmittance
Silicon-on-insulator
Synthetic grating
Synthetic grating
Silicon-on-insulator
Reflectance and transmittance
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Summary:A single apt photonic device is adduced in this research for operating two signals concurrently In this case the proposed device deals with synthetic grating silicon on insulator (SOI) structure, where signals are realized with the wavelengths of 1310nm and 1550nm. To accomplish the same, reflectance and transmittance characteristics are investigated using plane wave expansion (PWE) technique pertaining wavelengths. To validate the PWE method, this report compares the output f some exsiting work with present simulating result which is carried out by PWE method. Finally, this work divulges that the thickness of odd and even layer including nature, position and configuration of grating SOI structure is a paramount parameter to yield maximum output from such aforementioned proposed structure.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2017.09.085