Improved dielectric performance of polyvinylidene fluoride (PVDF) - Carbon dots composites
Polymer nanocomposites with high dielectric constant and low-loss tangent materials have been extensively used in devices. Polyvinylidene fluoride (PVDF)-carbon dot (C-dot) nanocomposites have been synthesized to investigate the effect of C-dot on AC conductivity and dielectric properties. The FTIR...
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Published in | Physica. E, Low-dimensional systems & nanostructures Vol. 147; p. 115589 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Polymer nanocomposites with high dielectric constant and low-loss tangent materials have been extensively used in devices. Polyvinylidene fluoride (PVDF)-carbon dot (C-dot) nanocomposites have been synthesized to investigate the effect of C-dot on AC conductivity and dielectric properties. The FTIR spectra of synthesized samples confirm the formation of composites. The broadening of the peak in XRD patterns with an increase in the C-dot concentration has been observed, indicating the interaction of PVDF with C-dot. Morphological studies were carried out using Scanning electron microscopy (SEM). Frequency-dependent conductivity and dielectric properties were studied in the frequency range of 10 Hz to 8 MHz. AC conductivity graphs were found to obey Jonscher's power law and show no contact loss behavior. Prepared samples show improved dielectric constant with an increase in C-dot filler concentrations. Moreover, all samples show tangent loss of less than 0.015 at 1 kHz frequency. These results demonstrate that composite possesses broad application prospects in device electronics.
•PVDF -carbon dots composites have been synthesized to improve dielectric performance of the composite samples.•The improved dielectric constant with a small increase in C-dot concentration has been observed.•The MWS type of interfacial polarization phenomenon has been observed.•Lower value of loss tangent, indicating the potential application of the samples for the device applications. |
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ISSN: | 1386-9477 1873-1759 |
DOI: | 10.1016/j.physe.2022.115589 |