A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

• Published in: Applied physics. A, Materials science & processing Vol. 82; no. 2; pp. 287 - 292
• Main Authors: HSIEH, S.-W, KUO, Y.-K
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01.02.2006; Springer Nature B.V
• Subjects: Applied physics; Electrons; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Heterostructures; Indium phosphides; Laser optical systems: design and operation; Lasers; Materials science; Operating temperature; Optical properties; Optics; Physical properties; Physics; Quantum wells; Resonators, cavities, amplifiers, arrays, and rings; Semiconductor lasers; laser diodes; Simulation; Temperature; Temperature dependence; Threshold currents; Aluminium arsenides; Temperature dependence; Theoretical study; Multiple quantum well; Binary compounds; Threshold current; Numerical method; Experimental study; Laser cavity resonators; Semiconductor lasers; Strains; Indium phosphides; Optical properties; Quantum well lasers; Gradient index optics; Heterostructures; III-V semiconductors
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-005-3386-y

Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga0.095In0.73As (6 nm)/Al0.32Ga0.2In0.48As (10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.