Resistive switching characteristics of TiO2 thin films with different electrodes

• Published in: Journal of the Korean Physical Society Vol. 67; no. 5; pp. 936 - 940
• Main Authors: Shim, Jae Hyuk, Hu, Quanli, Park, Mi Ra, Abbas, Yawar, Kang, Chi Jung, Kim, Jaewan, Yoon, Tae-Sik
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.09.2015; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Different top electrodes; thin film; TiO; Resistive switching
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.67.936

Resistive switching behaviors in metal oxides have been mentioned for several decades. TiO 2 is still a well-known material for resistive switching memory devices. The resistive switching characteristics of TiO 2 thin films with different top electrodes were investigated. The devices had typical bipolar resistive switching behaviors. The resistance changed from a high-resistance state (low-resistance state) to a low-resistance state (high-resistance state) under positive (negative) sweeping voltage. The interface between the top electrode and the oxide layer could affect the resistive switching behaviors. The electrical properties of Metal/TiO 2 /Pt devices with different top electrodes showed different switching characteristics. The conduction mechanism of the devices was also investigated. In the low-resistance state, ohmic conduction was dominant. The conduction mechanism exhibited ohmic conduction at low voltages and space-charge-limited-conduction at high voltages in the devices of Cu/TiO 2 /Pt, Ni/TiO 2 /Pt and Al/TiO 2 /Pt, respectively. For Ta/TiO 2 /Pt Schottky conduction also played an important role.