Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures

We show that the thresholds for picosecond (psec) laser pulse-induced latchup and energetic particle-induced latchup are well correlated over a range of bulk CMOS test structures designed to be susceptible to latchup. The spatial length of the latchup-sensitive node of the test structures covers a r...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 42; no. 6; pp. 1948 - 1956
Main Authors Moss, S.C., LaLumondiere, S.D., Scarpulla, J.R., MacWilliams, K.P., Crain, W.R., Koga, R.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1995
Subjects
Aerospace testing
Circuit testing
CMOS technology
Electronic equipment testing
Laser theory
Microelectronics
Optical design
Optical pulses
Performance evaluation
Space technology
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Summary:We show that the thresholds for picosecond (psec) laser pulse-induced latchup and energetic particle-induced latchup are well correlated over a range of bulk CMOS test structures designed to be susceptible to latchup. The spatial length of the latchup-sensitive node of the test structures covers a range of values that commonly occur in bulk CMOS devices. The accuracy of this correlation implies that laser-induced latchup can be used for hardness assurance and, under the proper conditions, can be an accurate predictor of latchup threshold linear energy transfer (LET) for most bulk CMOS devices.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.489239