Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 °C for 5 min...

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 42; no. 9; pp. 2420 - 2423
Main Authors Jiang, Fang, Cai, Li-E, Zhang, Jiang-Yong, Zhang, Bao-Ping
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.2010
Subjects
AES
High reflective
Optimal conditions
p-GaN
p-GaN
Optimal conditions
High reflective
AES
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Summary:A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 °C for 5 min in an O 2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2010.05.027