Low temperature dry etching of chromium towards control at sub-5 nm dimensions

• Published in: Nanotechnology Vol. 27; no. 41; p. 415302
• Main Authors: Staaks, Daniel, Yang, XiaoMin, Lee, Kim Y, Dhuey, Scott D, Sassolini, Simone, Rangelow, Ivo W, Olynick, Deirdre L
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 14.10.2016
• Subjects: bit patterned media; chromium; dry etching; ICP; inductively coupled plasma; low temperature; oxygen concentration
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/27/41/415302

Patterned chromium and its compounds are crucial materials for nanoscale patterning and chromium based devices. Here we investigate how temperature can be used to control chromium etching using chlorine/oxygen gas mixtures. Oxygen/chlorine ratios between 0% and 100% and temperatures between −100 °C and +40 °C are studied. Spectroscopic ellipsometry is used to precisely measure rates, chlorination, and the thickness dependence of n and k. Working in the extremes of oxygen content (very high or very low) and lower temperatures, we find rates can be controlled to nanometers per minute. Activation energies are measured and show that etch mechanisms are both temperature and oxygen level dependent. Furthermore, we find that etching temperature can manipulate the surface chemistry. One surprising consequence is that at low oxygen levels, Etching rates increase with decreasing temperature. Preliminary feature-profile studies show the extremes of temperature and oxygen provide advantages over commonly used room temperature processing conditions. One example is with higher ion energies at −100 °C, where etching products deposit.