Determining the number of graphene layers based on Raman response of the SiC substrate

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 134; p. 114853
• Main Authors: Dobrowolski, A., Jagiełło, J., Czołak, D., Ciuk, T.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2021
• Subjects: CVD; Epitaxy; Graphene; Quality assessment; Raman imaging; SiC; CVD; Quality assessment; SiC; Graphene; Raman imaging; Epitaxy

In this report we demonstrate a method for direct determination of the number of layers of hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semiinsulating vanadium-compensated on-axis 6H-SiC(0001). The method anticipates that the intensity of the substrate’s...