Determining the number of graphene layers based on Raman response of the SiC substrate

In this report we demonstrate a method for direct determination of the number of layers of hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semiinsulating vanadium-compensated on-axis 6H-SiC(0001). The method anticipates that the intensity of the substrate’s...

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 134; p. 114853
Main Authors Dobrowolski, A., Jagiełło, J., Czołak, D., Ciuk, T.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2021
Subjects
CVD
Epitaxy
Graphene
Quality assessment
Raman imaging
SiC
CVD
Quality assessment
SiC
Graphene
Raman imaging
Epitaxy
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Summary:In this report we demonstrate a method for direct determination of the number of layers of hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semiinsulating vanadium-compensated on-axis 6H-SiC(0001). The method anticipates that the intensity of the substrate’s Raman-active longitudinal optical A1 mode at 964 cm−1 is attenuated by 2.3% each time the light passes through a single graphene layer. Normalized to its value in a graphene-free region, the A1 mode relative intensity provides a greatly enhanced topographic image of graphene and points out to the number of its layers within the terraces and step edges, making the technique a reliable diagnostic tool for applied research. •Direct determination of the number of graphene layers.•High-resolution Raman imaging.•Novel protocol for graphene classification and standardization.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2021.114853