Studies of SiO2 thin films implanted with 100keV silicon ions

• Published in: Materials today : proceedings Vol. 23; pp. 345 - 351
• Main Authors: Vishwakarma, Suraj B., Dubey, Sheshmani K., Dubey, R.L., Bambole, V., Sulania, I., Kanjilal, D.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2020
• Subjects: AFM; GAXRD; Ion implantation; Raman Scattering; Silicon nanocrystals; Silicon nanocrystals; AFM; Ion implantation; GAXRD; Raman Scattering
• ISSN: 2214-7853; 2214-7853
• DOI: 10.1016/j.matpr.2020.02.034

100 keV energetic siliconnegative ions with fluences varying from 1 x 10 15 to 2 x 10 17 ions-cm-2 are implanted in SiO2 thin film of thickness 300 nm grown on silicon substrate. Structural properties of as-implanted samples have been investigated using glancing angle X-ray diffraction (GAXRD) and Raman Scattering. The topographical studies have been done by Atomic Force Microscopy (AFM) measurements. X-ray diffraction spectra of non-implanted sample showed the presence of broad XRD peak of SiO2 at 22° and silicon peak at 54°with d∼0.177 nm corresponding to (311) reflection. The GAXRD investigation of implanted samples showed increase in the X-ray peak intensity for glancing angle 2° as compared to 1.5°. Particle size decreases and found to vary with ion fluences at the angle of 2°as compared with 1.5°, this may be due to cluster formation varies within SiO2 matrix with depth. Raman scattering measurements reveals that theband spectra about 1100-1200 cm-1 appears due to oxide layer covering the silicon nanoclusters formed as well as the Si-O-Si stretching vibrations within SiO2 matrix. AFM studies reveal that as compared to non-implanted samples the roughness of implanted samples decreased after implantation.