Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain

We have developed a novel unidirectional AlGaN/GaN-on-Si heterojunction field-effect transistor (HFET) with reverse blocking drain. A recessed Schottky contact was incorporated into a conventional ohmic drain electrode to prevent the undesired reverse current flow while reducing the turn-on voltage...

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Bibliographic Details
Published inApplied physics express Vol. 7; no. 1; pp. 14101 - 14104
Main Authors Lee, Jae-Gil, Han, Sang-Woo, Park, Bong-Ryeol, Cha, Ho-Young
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.01.2014
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Summary:We have developed a novel unidirectional AlGaN/GaN-on-Si heterojunction field-effect transistor (HFET) with reverse blocking drain. A recessed Schottky contact was incorporated into a conventional ohmic drain electrode to prevent the undesired reverse current flow while reducing the turn-on voltage in forward current characteristics. The combination of recessed Schottky and ohmic electrodes significantly reduced the turn-on voltage in comparison with a conventional Schottky drain. A turn-on voltage of 0.4 V, an off-state forward breakdown voltage of 615 V, and a reverse blocking drain voltage of −685 V were achieved for the gate-to-drain distance of 12 µm.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.014101