Bipolar resistive switching effect in laser-induced crystallization AgInSbTe films

Ag8In14Sb55Te23 (AIST) films were deposited on k9 glass substrates by DC magnetron sputtering. A laser direct writing system was used to fabricate the crystalline arrays on as-deposited amorphous films. Electrical properties of crystallized bits were investigated by using conductive atomic force mic...

Full description

Saved in:
Bibliographic Details
Published inOptik (Stuttgart) Vol. 180; pp. 271 - 275
Main Authors Zhai, FengXiao, Yang, Kun, Wang, Donglin, Liu, Sujuan, Liu, Nanan, Hao, Yunqi, Ren, Yufen
Format Journal Article
LanguageEnglish
Published Elsevier GmbH 01.02.2019
Subjects
AgInSbTe
Bipolar resistance switching
Phase change film
Phase change film
Bipolar resistance switching
AgInSbTe
Online AccessGet full text

Cover

More Information
Summary:Ag8In14Sb55Te23 (AIST) films were deposited on k9 glass substrates by DC magnetron sputtering. A laser direct writing system was used to fabricate the crystalline arrays on as-deposited amorphous films. Electrical properties of crystallized bits were investigated by using conductive atomic force microscopy (CAFM). Bipolar resistance switching and memory effects were observed on nanoscale area of crystalline bits. The crystalline arrays exhibit reproducible bistable resistive switching induced by bias amplitude and polarity. It is hoped that multistate memory can be achieved by using AgInSbTe phase change material.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2018.11.100