Synaptic plasticity modulation and coincidence detection emulated in multi-terminal neuromorphic transistors

• Published in: Organic electronics Vol. 92; p. 106125
• Main Authors: Liu, Rui, He, Yongli, Jiang, Shanshan, Wang, Longcheng, Wan, Qing
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2021
• Subjects: Electric-double-layer transistors; Neuromorphic computing; Plasticity modulation; Plasticity modulation; Electric-double-layer transistors; Neuromorphic computing
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2021.106125

Human brain is a powerful biological computer that can processing a large number of cognitive tasks simultaneously. Inspired by our brain, many emerging devices have been developed for neuromorphic computing and perception in recent years. Due to the interfacial electron/ion coupling, electric-double-layer (EDL) transistors gated by electrolytes are promising candidates for neuromorphic devices. Here, we demonstrate a multi-terminal indium-tin-oxide (ITO)-based EDL transistor gated by chitosan electrolyte and this device exhibits good electrical properties. Short-term synaptic plasticity modulation and neuron functions (temporal integration, coincidence detection) are investigated. Our results indicate that oxide-based EDL transistors are promising for neuromorphic application. [Display omitted] •A multi-terminal oxide-based electric-double-layer transistor is fabricated.•Polysaccharide polymer acts as gate dielectrics.•Short-term synaptic plasticity modulation is investigated.•Temporal integration and coincidence detection are realized.