Preparation of titanium oxide layer on silica glass substrate with titanium naphthenate precursor

• Published in: Journal of sol-gel science and technology Vol. 35; no. 3; pp. 237 - 243
• Main Authors: HWANG, Kyu-Seog, JEONG, Ju-Hyun, JEON, Young-Sun, JEON, Kyung-Ok, KIM, Byung-Hoon
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 01.09.2005; Springer Nature B.V
• Subjects: Anatase; Annealing; Chemistry; Colloidal gels. Colloidal sols; Colloidal state and disperse state; Electron microscopes; Exact sciences and technology; Field emission microscopy; General and physical chemistry; Glass substrates; Heat treatment; High temperature; Infrared analysis; Infrared spectrophotometers; Near infrared radiation; Precursors; Scanning probe microscopes; Silica glass; Silicon dioxide; Thin films; Titanium dioxide; Titanium oxides; X-ray diffraction; Oxide layer; Film; Rutile; Transition element compounds; Glass; Transmittance; Precursor; Silica; TiO2 film; Substrate; nanocrystalline; Preparation; Titanium oxide; Nanocrystal; annatase
• ISSN: 0928-0707; 1573-4846
• DOI: 10.1007/s10971-005-2023-8

Nanocrystalline TiO2 thin films on silica glass substrates were prepared by using a naphthenic acid precursor. As-deposited thin films were heat treated at 500, 600, 700 and 800∘C for 30 min in air. The TiO2 thin films were analyzed by High Resolution X-ray diffraction, ultra violet—visible—near infrared spectrophotometer, field emission—scanning electron microscope and scanning probe microscope. After annealing at 600 and 700∘C, the XRD patterns consist of only anatase peaks of TiO2 film. Rutile(110) peak begins to appear at an annealing temperature of 800∘C. Relative high transmittance at visible range was obtained for all films except the film annealed at 800∘C. Optical band gap, Eg, is in the range between 3.53 and 3.78 eV except the TiO2 film annealed at 500∘C. The best hydrophilicity was achieved with a high-temperature annealing.