PANI/ZnO Hybrid Nanocomposites TFT for NAND Gate Application

Thin Film Transistor (TFT) is the key element for future day’s electronic circuit, in which low cost, low temperature, vacuum free process and flexibility of the substrate are the need for the day. With Cellulose acetate substrate as an insulator layer for the TFT, the C-V characteristic had been pe...

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Bibliographic Details
Published inMaterials today : proceedings Vol. 5; no. 4; pp. 10827 - 10832
Main Authors Omprakash, S.S., Naveen Kumar, S.K.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2018
Subjects
NAND gate
Nanocomposites
Organic polymers semiconductor
TFT
TFT
NAND gate
Nanocomposites
Organic polymers semiconductor
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Summary:Thin Film Transistor (TFT) is the key element for future day’s electronic circuit, in which low cost, low temperature, vacuum free process and flexibility of the substrate are the need for the day. With Cellulose acetate substrate as an insulator layer for the TFT, the C-V characteristic had been performed to find the dielectric constant. Polyaniline (PANI) is doped with Zinc Oxide (ZnO), and these Nanocomposites are coated on the substrate. The structure of TFT is achieved by coating electrodes on PANI/ZnO layer and substrate. Study was done on this hybrid structure for its electrical characteristics such as mobility and resistivity. The surface roughness and morphology of PANI/ZnO were characterized by Atomic Force Microscope (AFM) and Scanning Electronic Microscope (SEM). The input and output characteristics of TFT was obtained using I-V measurement system. One of the basic building blocks of digital circuits is NAND gate. The NAND gate is designed, fabricated and tested for its output voltage.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2017.12.369