Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: Graphene quantum-dot nanocomposites

• Published in: Organic electronics Vol. 51; pp. 156 - 161
• Main Authors: Kim, Do Hyeong, Kim, Woo Kyum, Woo, Sung Jun, Wu, Chaoxing, Kim, Tae Whan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2017
• Subjects: Graphene quantum-dot; Hybrid nanocomposite; Memristive device; PVP; Hybrid nanocomposite; PVP; Graphene quantum-dot; Memristive device
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2017.09.005

The properties of nonvolatile memristive devices (NMD) fabricated utilizing organic/inorganic hybrid nanocomposites were investigated due to their superior advantages such as mechanical flexibility, low cost, low-power consumption, simple technological process in fabrication and high reproducibility. The current-voltage (I-V) curves for the Al/polyvinylpyrrolidone (PVP): graphene quantum-dot (GQD)/indium-tin-oxide (ITO) memristive devices showed current bistability characteristics at 300 K. The window margins corresponding to the high-conductivity (ON) state and the low-conductivity (OFF) state of the devices increased with increasing concentration of the GQDs. The ON/OFF ratio of the optimized device was 1 × 104, which was the largest memory margin among the devices fabricated in this research. The endurance number of ON/OFF switching was above 1 × 102 cycles, and the retention time was relatively constant, maintaining a value above 104 s. The devices showed high reproducibility with the writing voltage being distributed between −0.5 and −1.5 V and the erasing voltage being distributed between 2 and 3 V. The ON state currents remained between 0.02 and 0.03 A, and the OFF state currents stayed between 10−6 and 10−4 A. The carrier transport mechanisms are illustrated by using both the results obtained by fitting the I-V curves and the energy band diagrams of the devices. [Display omitted] •Highly-reproducible nonvolatile memristive devices based on PVP: GQD hybrid nanocomposites were fabricated.•The I-V curves for the devices showed current bistability characteristics.•The window margins corresponding to the ON state and OFF state of the devices increased with increasing concentration of the GQDs.•The carrier transport mechanisms are illustrated by using the I-V curves and the energy band diagrams.