Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer

To address the green-gap challenge, a new device design for a green light-emitting diode, with considerable improvement in the optoelectronic performance, is proposed and analyzed numerically. By employing quaternary quantum well and removing the electron-blocking layer in the proposed device, both...

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Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 106; pp. 68 - 72
Main Authors Usman, Muhammad, Mushtaq, Urooj, Saba, Kiran, Han, Dong-Pyo, Muhammad, Nazeer, Imtiaz, Waqas A., Jahangir, Adnan
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2019
Subjects
Green
Indium gallium nitride
Inorganic light emitting diodes
Internal quantum efficiency
Quantum well
Quaternary
Radiative recombination
Quantum well
Quaternary
Radiative recombination
Inorganic light emitting diodes
Internal quantum efficiency
Indium gallium nitride
Green
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Summary:To address the green-gap challenge, a new device design for a green light-emitting diode, with considerable improvement in the optoelectronic performance, is proposed and analyzed numerically. By employing quaternary quantum well and removing the electron-blocking layer in the proposed device, both the internal quantum efficiency as well as light output power are improved significantly by 160% at 100 A cm−2. The peak wavelength of both the devices is ∼510 nm. The electrostatic field in the proposed device is reduced by roughly ∼26%. Additionally, the current density-voltage characteristics of the proposed device show reduced turn-on voltage. The wall-plug efficiency of the proposed device is also improved in comparison with the conventional device.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2018.10.019