Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer
To address the green-gap challenge, a new device design for a green light-emitting diode, with considerable improvement in the optoelectronic performance, is proposed and analyzed numerically. By employing quaternary quantum well and removing the electron-blocking layer in the proposed device, both...
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Published in | Physica. E, Low-dimensional systems & nanostructures Vol. 106; pp. 68 - 72 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.02.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To address the green-gap challenge, a new device design for a green light-emitting diode, with considerable improvement in the optoelectronic performance, is proposed and analyzed numerically. By employing quaternary quantum well and removing the electron-blocking layer in the proposed device, both the internal quantum efficiency as well as light output power are improved significantly by 160% at 100 A cm−2. The peak wavelength of both the devices is ∼510 nm. The electrostatic field in the proposed device is reduced by roughly ∼26%. Additionally, the current density-voltage characteristics of the proposed device show reduced turn-on voltage. The wall-plug efficiency of the proposed device is also improved in comparison with the conventional device. |
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ISSN: | 1386-9477 1873-1759 |
DOI: | 10.1016/j.physe.2018.10.019 |