Colloidal synthesis of stable ZnSe nanoparticles
Metal chalcogenides such as ZnX (X = S, Se, Te) nanostructures, belonging to the II-VI group of semiconductor family are known to be potential candidates in diverse applications due to their distinctive characteristics such as size dependent opto-electronic properties and ease in processibility. Her...
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Published in | Materials today : proceedings Vol. 60; pp. 1099 - 1102 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
2022
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Subjects | |
Online Access | Get full text |
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Summary: | Metal chalcogenides such as ZnX (X = S, Se, Te) nanostructures, belonging to the II-VI group of semiconductor family are known to be potential candidates in diverse applications due to their distinctive characteristics such as size dependent opto-electronic properties and ease in processibility. Herein, the preparation of Zinc selenide (ZnSe) nanoparticles using simple, water soluble precursors under ambient conditions is reported. Thioglycolic acid is used as the capping agent for the controlled nucleation and growth mechanism, resulting in the formation of homogeneous ZnSe nanoparticles. The UV–Vis absorption spectrum clearly showed a remarkable blue shift as compared to its bulk counterpart and the fluorescence spectra exhibited broad- intense emission spectra which may be attributed to defect related emission. The as prepared ZnSe nanoparticles remain stable even after aging. The dearth of the S-H vibration band in the FTIR spectra indicatesthe SH functional group are attached to the Zn2+surfaces of the ZnSe nanoparticles implying that thiol-assisted capping of ZnSe has occurred. The X-ray diffraction pattern reveals the cubic phase crystal structure and the estimated particle size is 3.0 nm. Thus, the present synthetic approach is robust, cost effective, scalable and avoids usage of toxic chemicals, high temperatures and pressures. These ZnSe nanoparticles can be implemented for electrical and optical communication, storage devices and display applications. |
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ISSN: | 2214-7853 2214-7853 |
DOI: | 10.1016/j.matpr.2022.02.009 |