Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction

The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation- recombination model are introduced into a drift-diffusion transport mo...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 4; pp. 353 - 357
Main Author 铴盼 谌文杰 王娇 闫兆文 乔坚栗 肖彤 王欣 庞正鹏 杨建红
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2016
Subjects
Computer simulation
Doping
Electric fields
Gates
Magnetoresistance
Magnetoresistivity
Mathematical analysis
Mathematical models
newton iteration
p-n junction
P-N结
掺杂浓度
数值模拟
栅极电压
电场控制
磁电阻效应
辅助模型
连续性方程
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Summary:The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation- recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equa- tions are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO2 thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance （MR） can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.
Bibliography:The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation- recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equa- tions are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO2 thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance （MR） can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.
11-5639/O4
magnetoresistance, p-n junction, newton iteration
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/4/047306