A study of stoichiometric composition of Ge thermal oxide by X-ray photoelectron spectroscopic depth profiling

• Published in: Materials today : proceedings Vol. 7; pp. 619 - 624
• Main Authors: Anisuzzaman, Mohammad, Ab Manaf, Norani, Saharudin, Suhairi, Yasui, Kanji, Manaf Hashim, Abdul
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2019

The evolution of different oxidation states during thermal oxidation of (100) oriented Ge substrate was investigated with X-ray photoelectron spectroscopic analysis. The thermally grown oxides in the temperature range of 380 to 500°C were found to consist of four different oxidation states of Ge, na...