A study of stoichiometric composition of Ge thermal oxide by X-ray photoelectron spectroscopic depth profiling

The evolution of different oxidation states during thermal oxidation of (100) oriented Ge substrate was investigated with X-ray photoelectron spectroscopic analysis. The thermally grown oxides in the temperature range of 380 to 500°C were found to consist of four different oxidation states of Ge, na...

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Published inMaterials today : proceedings Vol. 7; pp. 619 - 624
Main Authors Anisuzzaman, Mohammad, Ab Manaf, Norani, Saharudin, Suhairi, Yasui, Kanji, Manaf Hashim, Abdul
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2019
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Summary:The evolution of different oxidation states during thermal oxidation of (100) oriented Ge substrate was investigated with X-ray photoelectron spectroscopic analysis. The thermally grown oxides in the temperature range of 380 to 500°C were found to consist of four different oxidation states of Ge, namely, Ge1+, Ge2+, Ge3+, and Ge4+. The fractional composition of the oxide species is seen to be dependent on oxidation temperature. Spectroscopic depth profiling reveals variation of oxide composition along the depth of the oxide layer with a large concentration of GeO2 near the oxide surface and a large concentration of suboxides near the oxide/Ge interface. The results obtained in the investigation will help in achieving greater insight into the thermal oxidation process of Ge
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2018.12.052