A describing function approach to bipolar RF-power amplifier simulation

A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the termina...

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Bibliographic Details
Published inIEEE transactions on circuits and systems Vol. 28; no. 8; pp. 758 - 767
Main Author Vidkjaer, J.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.1981
Subjects
Capacitance
Computational modeling
Costs
Helium
Performance gain
Power amplifiers
Power generation
Radio frequency
Time domain analysis
VHF circuits
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Summary:A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.
ISSN:0098-4094
1558-1276
DOI:10.1109/TCS.1981.1085047