Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

• Published in: Journal of the Korean Physical Society Vol. 64; no. 3; pp. 337 - 340
• Main Authors: Lim, Myung-Hoon, Yoo, Gwangwe, Lee, Jongtaek, Jeong, Seok-Won, Roh, Yonghan, Park, Jin-Hong, Kwon, Namyong, Jung, Woo-Shik
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.02.2014; 한국물리학회
• Subjects: Letters; Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; IGZO; Memory; Au NPs
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.64.337

In this letter, the electrical characteristics of nonvolatile memory devices based on back gatetype indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 °C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I D -V G ) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α -IGZO through the non-uniform Al 2 O 3 tunneling layer seemed to further degrade the device performance.