Thermally Induced Crystallization of TiBx Thin Film after Deposition by Dual Beam IBAD Method

Thin TiBx film was formed on Si (100) substrate by dual beam ion assisted deposition method using two Ar+ ion beams of the same energy at 15 keV and TiB2 target. The microstructure of the film was examined using transmission electron microscopy methods in as - deposited state and during in - situ po...

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Bibliographic Details
Published inMaterials today : proceedings Vol. 3; no. 8; pp. 2646 - 2651
Main Authors Twardowska, A., Morgiel, J., Rajchel, B.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2016
Subjects
Crystallization
DB IBAD
TEM
Thin Film
TiB2
TiB2
DB IBAD
Thin Film
TEM
Crystallization
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Summary:Thin TiBx film was formed on Si (100) substrate by dual beam ion assisted deposition method using two Ar+ ion beams of the same energy at 15 keV and TiB2 target. The microstructure of the film was examined using transmission electron microscopy methods in as - deposited state and during in - situ post - deposition heat treatment conducted at 20 - 550°C temperature range. The crystallization of TiBx film starts at 550 °C and short isothermal heating at that temperature allows to obtain crystalline/amorphous nanocomposite. In the TiBx thin film nanocrystallites of TiB and TiB2 phases were identified. Post-deposition heat treatment induced also crystallization in thin amorphous subsurface layer of Si substrate, formed during deposition by intensive bombardment of assistant beam of Ar+ ions.
ISSN:2214-7853
2214-7853
DOI:10.1016/j.matpr.2016.06.008