FDSOI 28nm performances study for RF energy scavenging

This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technolog...

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Bibliographic Details
Published inIOP conference series. Materials Science and Engineering Vol. 321; no. 1; pp. 12009 - 12012
Main Authors Rochefeuille, E, Alicalapa, F, Douyère, A, Vuong, T P
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2018
Subjects
Charge pumps
CMOS
Energy harvesting
Radio frequency
SOI (semiconductors)
Transistors
Voltage gain
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Summary:This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/321/1/012009