FDSOI 28nm performances study for RF energy scavenging
This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technolog...
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Published in | IOP conference series. Materials Science and Engineering Vol. 321; no. 1; pp. 12009 - 12012 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.03.2018
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Subjects | |
Online Access | Get full text |
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Summary: | This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications. |
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ISSN: | 1757-8981 1757-899X |
DOI: | 10.1088/1757-899X/321/1/012009 |