X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

• Published in: Electronics letters Vol. 60; no. 10
• Main Authors: Jeong, Junhyung, Cho, Kyujun, Ji, Honggu, Chang, Woojin, Lee, Jongmin, Min, Byoung‐gue, Kang, Dongmin
• Format: Journal Article
• Language: English
• Published: Wiley 01.05.2024
• Subjects: microwave amplifiers; monolithic microwave integrated circuit power amplifiers; solid modelling
• ISSN: 0013-5194; 1350-911X
• DOI: 10.1049/ell2.13221

This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class‐F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 µm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth. This paper introduces a novel X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. A novel quasi Class‐F output matching circuit is proposed to improve efficiency, with DynaFET modelling for GaN HEMT employed for HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 µm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth.